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| TPC8035-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8035-H High Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications * * * * * * * Small footprint due to small and thin package High-speed switching Small gate charge: QSW = 17 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 2.3 m (typ.) High forward transfer admittance: |Yfs| = 70 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR (Note 2a) (Note 4) Channel temperature Storage temperature range EAR Tch Tstg Rating 30 30 20 18 72 1.9 Unit V V V A JEDEC JEITA TOSHIBA 2-6J1B Pulsed (Note 1) (t = 10 s) (Note 2a) (t = 10 s) (Note 2b) Drain power dissipation W Weight: 0.085 g (typ.) Drain power dissipation 1.0 W Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy Circuit Configuration 211 18 0.082 150 -55 to 150 mJ 8 7 6 5 A mJ C C 1 2 3 4 Note: For Notes 1 to 4, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating" Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. 1 2008-08-22 TPC8035-H Thermal Characteristics Characteristic Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Symbol Rth (ch-a) Max 65.8 Unit C/W Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Rth (ch-a) 125 C/W Marking (Note 5) TPC8035 H Part No. (or abbreviation code) Lot No. A line indicate lead(Pb)-free finish. Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 x 25.4 x 0.8 (Unit: mm) FR-4 25.4 x 25.4 x 0.8 (Unit: mm) (a) (b) Note 3: VDD = 24 V, Tch = 25C (initial), L = 500 H, RG = 25 , IAR = 18 A Note 4: Repetitive rating: pulse width limited by max channel temperature Note 5: * on lower left of the marking indicates Pin 1. * Weekly code: (Three digits) Week of manufacture (01 for the first week of a year: sequential number up to 52 or 53) Year of manufacture (The last digit of a year) 2 2008-08-22 TPC8035-H Electrical Characteristics (Ta = 25C) Characteristic Gate leakage current Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Gate resistance Rise time Turn-ON time Switching time Fall time Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain ("miller") charge Gate switch charge tf toff Qg Qgs1 Qgd QSW VDD 24 V, VGS = 10 V, ID = 18 A Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) |Yfs| Ciss Crss Coss rg tr VGS ton 10 V 0V 4.7 VDS = 10 V, VGS = 0 V, f = 1 MHz VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 20 V, VDS = 0 V VDS = 30 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = -20 V VDS = 10 V, ID = 1 mA VGS = 4.5 V, ID = 9 A VGS = 10 V, ID = 9 A VDS = 10 V, ID = 9 A Min 30 15 1.3 35 ID = 9 A RL = 1.67 VOUT Typ. 2.6 2.3 70 6000 380 1100 1.0 5.1 16 11 69 82 44 14 13 17 Max 100 10 2.3 3.6 3.2 7800 610 1.5 ns nC pF Unit nA A V V m S VDD 15 V Duty 1%, tw = 10 s VDD 24 V, VGS = 10 V, ID = 18 A VDD 24 V, VGS = 5 V, ID = 18 A Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol IDRP VDSF Test Condition IDR = 18 A, VGS = 0 V Min Typ. Max 72 -1.2 Unit A V 3 2008-08-22 TPC8035-H 10 20 86 5 2.7 ID - VDS 2.65 2.6 10 50 86 5 2.9 ID - VDS 2.8 Common source Ta = 25C Pulse test 2.7 4.5 4.5 16 (A) 2.55 12 2.5 8 Common source Ta = 25C Pulse test 2.4 VGS = 2.3 V 0 ID ID Drain current (A) 40 30 Drain current 20 2.6 4 10 2.5 VGS = 2.3 V 1 0 0 0.4 0.8 1.2 1.6 2 0 0.2 0.4 0.6 0.8 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS 40 Common source VDS = 10 V Pulse test 0.2 VDS - VGS Common source Ta = 25 Pulse test 0.15 32 (A) ID Drain-source voltage 24 Drain current VDS 16 100 8 Ta = -55C 25 (V) 0.1 0.05 9 4.5 ID = 18 A 0 0 1 2 3 4 5 0 0 2 4 6 8 10 Gate-source voltage VGS (V) Gate-source voltage VGS (V) Yfs - ID (S) 1000 Common source VDS = 10 V Pulse test 10 RDS (ON) - ID |Yfs| 100 Ta = -55C 10 100 25 Forward transfer admittance Drain-source ON-resistance RDS (ON) (m) 4.5 1 VGS = 10 V Common source Ta = 25 Pulse test 1 0.1 1 10 100 0.1 0.1 1 10 100 Drain current ID (A) Drain current ID (A) 4 2008-08-22 TPC8035-H RDS (ON) - Ta 5 100 IDR - VDS 10 (A) Common source Pulse test Drain-source ON-resistance RDS (ON) (m) 4 ID = 4.5 A,9 A,18 A 3 ID = 4.5 A,9 A,18 A 2 VGS = 4.5 V 4.5 3 1 10 VGS = 0 V 1 VGS = 10 V Drain reverse current IDR Common source Ta = 25C Pulse test 1 0 0 -80 -40 0 40 80 120 160 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 Ambient temperature Ta (C) Drain-source voltage VDS (V) Capacitance - VDS 10000 2.5 Vth - Ta Vth (V) Gate threshold voltage Ciss (pF) 2 1000 Coss Crss 100 Common source VGS = 0 V f = 1 MHz Ta = 25C 10 0.1 1 10 100 C 1.5 Capacitance 1 0.5 Common source VDS = 10 V ID = 1 mA Pulse test -40 0 40 80 120 160 0 -80 Drain-source voltage VDS (V) Ambient temperature Ta (C) PD - Ta 2 Dynamic input/output characteristics 50 Common source ID = 18 A 40 Ta = 25C Pulse test 20 (V) PD 16 VDS Drain power dissipation Drain-source voltage 1.0 (2) VDS VDD = 6 V 20 24 V 10 12 V 8 0.5 4 0 0 40 80 120 160 0 0 20 40 60 80 0 100 Ambient temperature Ta (C) Total gate charge Qg (nC) 5 2008-08-22 Gate-source voltage 30 12 VGS 1.5 (V) (1) (1)Device mounted on a glass-epoxy board(a) (Note 2a) (2)Device mounted on a glass-epoxy board(b) (Note 2b) t=10 s (W) TPC8035-H rth - tw 1000 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) (2) Transient thermal impedance rth (C/W) 100 (1) 10 1 0.1 0.01 0.0001 Single - pulse 0.001 0.01 0.1 1 10 100 1000 Pulse width tw (s) Safe operating area 1000 (A) 100 ID max (Pulse) * t =1 ms * 10 ms * Drain current ID 10 1 * Single - pulse Ta = 25 Curves must be derated linearly with increase in temperature. 0.1 0.1 VDSS max 1 10 100 Drain-source voltage VDS (V) 6 2008-08-22 TPC8035-H RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 20070701-EN GENERAL * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2008-08-22 |
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